Coherent announced it has advanced its silicon‑carbide epitaxy to support power devices up to 10 kV, a milestone that expands its product portfolio into high‑voltage AI data‑center and industrial power markets.
The new 150 mm and 200 mm thick epitaxy platforms enable device architectures that exceed 10 kV, allowing customers to build more compact, energy‑efficient power conversion systems for multi‑megawatt data centers and industrial infrastructure.
This capability positions Coherent to capture a growing market for high‑efficiency power systems in AI workloads, renewable energy, rail, fast‑charging, and grid infrastructure, strengthening its competitive moat in the wide‑bandgap semiconductor space.
"Next‑generation datacenter power architectures and high‑voltage industrial systems are key drivers for silicon carbide adoption. Our new thick epitaxy capability for multi‑kilovolt SiC devices enables customers to achieve higher efficiency and power density in critical applications such as energy infrastructure, high‑capacity uninterruptible power supplies, and advanced power distribution systems in AI datacenters," said Gary Ruland, Senior Vice President, Silicon Carbide.
The announcement was well received by investors, and analysts have noted the strategic significance of the 10 kV capability, though some have expressed concerns about valuation relative to fundamentals.
By extending its SiC technology, Coherent reinforces its broader strategy of delivering high‑performance photonics and power solutions to hyperscalers and industrial customers, positioning the company for continued growth in the expanding wide‑bandgap semiconductor market.
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