Navitas Semiconductor Corp. and the École Polytechnique Fédérale de Lausanne (EPFL) announced on March 4 2026 that they will demonstrate a 250‑kW solid‑state transformer (SST) at the APEC 2026 conference in San Antonio, Texas, from March 22‑26. The demo will feature Navitas’ GeneSiC™ ultra‑high‑voltage (UHV) 3300 V and high‑voltage (HV) 1200 V silicon‑carbide (SiC) trench‑assisted planar (TAP) MOSFETs and modules in a single‑stage, modularized bridge‑rectifier SST topology that converts 3.3 kV AC to 800 V DC at 250 kW.
The SST platform eliminates bulky low‑frequency transformers and improves end‑to‑end efficiency for next‑generation AI data centers that require 800‑V DC architectures. By integrating Navitas’ UHV and HV SiC MOSFETs with a novel transformer architecture, the system delivers galvanic isolation, scalability, and higher efficiency while enabling heat‑reuse opportunities in the data‑center environment.
Navitas’ “Navitas 2.0” strategy focuses on high‑power, high‑voltage solutions for AI workloads, moving beyond its legacy mobile‑charger business. The 250‑kW SST demonstrates the company’s ability to provide a complete power‑conversion stack—from grid to 800 V DC—using its proprietary SiC technology, a key component of the strategy. The demonstration underscores Navitas’ dual‑technology (GaN/SiC) advantage and its intent to capture a growing $3.5 billion serviceable market for 800‑V DC data‑center power systems by 2030.
Navitas’ Q4 2025 financial results, released on February 24 2026, showed revenue of $7.3 million, down from $10.1 million in Q3 2025 and $18.0 million in Q4 2024. The company’s gross margin was 38.7 % (non‑GAAP). High‑power markets contributed a majority of revenue for the first time, while mobile revenue fell below 25 %. Navitas guided for Q1 2026 revenue of $8–8.5 million and a gross margin of 38.7 % ± 25 bps, with operating expenses flat at approximately $15 million. The guidance signals confidence in sequential growth driven by high‑power markets and margin expansion as the high‑power mix increases.
"This engagement with EPFL demonstrates how next‑generation medium‑voltage power conversion can directly address the growing energy and thermal challenges inside AI data centers. By combining our 3300 V and 1200 V GeneSiC MOSFETs and modules with a novel single‑stage solid‑state transformer architecture and advanced real‑time control, we are enabling a scalable 800V‑DC distribution approach that delivers higher efficiency from the grid to the rack while creating new opportunities for heat reuse," said Paul Wheeler, VP & general manager of Navitas’ SiC business unit.
"This novel solid‑state transformer platform provides a galvanically isolated, flexible, scalable, and efficient interface between the medium‑voltage AC grid and an 800V‑DC data‑center architecture, while serving as a real‑world experimental environment for advanced distributed control," added Drazen Dujic, associate professor and director of EPFL’s Power Electronics Laboratory.
"We closed out the year with a productive fourth quarter, as we continued to accelerate our pivot to Navitas 2.0 and align the entire organization’s focus on addressing high‑power markets with our industry‑leading GaN and high‑voltage SiC solutions," said Chris Allexandre, President and CEO of Navitas. "As evidence of our progress, high‑power markets contributed a majority of revenue for the first time."
The APEC 2026 demo positions Navitas as a key player in the emerging high‑power semiconductor market for AI data centers, highlighting its technological leadership and strategic shift toward high‑margin, high‑growth segments.
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