Navitas Semiconductor Corp. introduced a 10 kW DC‑DC power platform that delivers a peak efficiency of 98.5 % and operates at a 1 MHz switching frequency. The all‑GaN design converts 800 V to 50 V and packs 2.1 kW of power into a compact 61 × 116 × 11 mm package, achieving a power density of 2.1 kW per cubic inch.
The platform incorporates 650 V and 100 V GaNFast FETs in a three‑level half‑bridge topology with synchronous rectification. This architecture enables the high efficiency and power density required to reduce cooling costs and increase compute density in AI workloads, positioning Navitas to meet the demands of next‑generation 800‑volt data‑center architectures.
Navitas’ launch is a core element of its “Navitas 2.0” pivot, moving the company from a mobile‑charger niche into a high‑margin power‑semiconductor business. The 800‑volt AI data‑center market is projected to reach $2.6 billion annually by 2030, and the new platform is designed to capture a share of that opportunity by providing the power density and efficiency that AI workloads increasingly require.
Although Navitas remains unprofitable—reporting a negative EBITDA of $74.26 million for the last twelve months—the company sees the 10 kW platform as a catalyst for revenue growth. President and CEO Chris Allexandre said the design “enables the transition to HVDC data‑center power infrastructure, supporting the future power requirements of AI workloads that will demand between 100‑ and even 1,000‑times more compute per query.”
Investors responded favorably to the announcement, reflecting confidence in the product’s potential to capture a growing AI data‑center power market. Navitas has secured strategic partnerships with GlobalFoundries for GaN manufacturing, Avnet for distribution, and NVIDIA as a power selector partner in NVIDIA’s 800‑volt AI factory ecosystem.
The company will showcase the platform at the APEC conference in San Antonio, Texas, from March 22‑26, where it will be evaluated by major data‑center customers.
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